Produção Acadêmica

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  1. Structural, optical and morphological characterization of amorphous GeMn films deposited by sputtering; FERRI, F A; ZANATTA, A R; Journal of Physics. D, Applied Physics, 42 (2009) 035005
  2. Effect of thermal annealing treatments on the optical properties of rare-earth-doped AlN films; ZANATTA, A R; Journal of Physics. D, Applied Physics, 42 (2009) 025109
  3. Resonant excitation of Mn local vibrational modes in the higher order Raman spectra of nanocrystalline GaMnN films; SILVA, J. H. D.; LEITE, D. M. G.; ZANATTA, A R;Zanatta, A. R.; Journal of Physics. Condensed Matter, 20 (2008) 252201
  4. Electrophoretic deposition of BaCaTiO3 nanpowders; Antonelli, E; Silva, RS; de Vicente, FS; ZANATTA, A R;Zanatta, A. R.; HERNANDES, A C; Journal of Materials Processing Technology, 203 (2008) 526 - 531
  5. Influence of film thickness on the crystallization of Ni-doped amorphous silicon samples; Ferri, F. A.; ZANATTA, A R;Zanatta, A. R.; Journal of Applied Physics, 104 (2008) 013534
  6. Crystallization, stress, and stress-relieve due to nickel in amorphous silicon thin films; ZANATTA, A R;Zanatta, A. R.; FERRI, F A; Journal of Applied Physics, 102 (2007) 043509-1 - 043509-5
  7. Aluminum-induced nanocrystalline Ge formation at low temperatures; MUNIZ, L.; RIBEIRO, C T M; ZANATTA, A R;Zanatta, A. R.; CHAMBOULEYRON, I; Journal of Physics. Condensed Matter, 19 (2007) 076206
  8. Red-green-blue light emission and energy transfer processes in amorphous SiN films doped with Sm and Tb; ZANATTA, A R;Zanatta, A. R.; KHAN, A.; KORDESCH, M.; Journal of Physics. Condensed Matter, 19 (2007) 436230-1 - 436230-8
  9. Amorphous BeN as a new solid host for rare-earth-related luminescent materials; ZANATTA, A R;Zanatta, A. R.; RICHARDSON, H.; KORDESCH, M.; physica status solidi (RRL), 1 (2007) 153 - 155
  10. The effect of the initial structure of silicon surface on the generation of multiple structural phases by ciclic microindentation; PIZANI, P S; JASINEVICIUS, R. G.; ZANATTA, A R;Zanatta, A. R.; Applied Physics Letters, 89 (2006) 31917
  11. Thermally synthesized ruby microstructures and luminescence centers; ZANATTA, A R;Zanatta, A. R.; RIBEIRO, C T M; JAHN, U; ALDABERGENOVA, S.; STRUNK, H.; Journal of Applied Physics, 100 (2006) 113112-1 - 113112-7
  12. Crystallization, texture and second-harmonic generation in TiO2-BaO-B2O3 glasses; FEITOSA, C A C; MASTELARO, V R; ZANATTA, A R;Zanatta, A. R.; HERNANDES, A C; ZANOTTO, E.; Optical Materials (Amsterdam), 28 (2006) 935 - 943
  13. Optical properties of Er and Er+Yb doped hydrogenated amorphous silicon films; OLIVEIRA, V I; FREIRE JÚNIOR, F L; ZANATTA, A R;Zanatta, A. R.; Journal of Physics. Condensed Matter, 18 (2006) 7709 - 7716
  14. Thermal activation, cathodo- and photoluminescence measurements of rare-earth-doped (Tm, Tb, Dy, Eu, Sm, Yb) amorphous/nanocrystalline AlN thin films prepared by reactive rf-sputtering; WEINGARTNER, R.; ERLENBACH, O.; WINNACKER, A.; WELTE, A.; BRAUER, I.; MENDEL, H.; STRUNK, H.; RIBEIRO, C T M; ZANATTA, A R;Zanatta, A. R.; Optical Materials (Amsterdam), 28 (2006) 790 - 793
  15. Spectroscopic investigation of Nd-doped amorphous SiN films; RIBEIRO, C T M; ZANATTA, A R;Zanatta, A. R.; Journal of Non-Crystalline Solids, 352 (2006) 1286 - 1289
  16. Metal-induced nanocrystalline structures in Ni-containing amorphous silicon thin films; FERRI, F A; ZANATTA, A R;Zanatta, A. R.; CHAMBOULEYRON, I; Journal of Applied Physics, 100 (2006) 094311-1 - 7
  17. Thermoluminescence of aluminophosphate glasses in the metaphosphate composition; SANTOS, C N; YUKIMUTI, K.; ZANATTA, A R;Zanatta, A. R.; HERNANDES, A C; Nuclear Instruments & Methods in Physics Research. Section B. Beam Interactions with Materials and Atoms, 246 (2006) 374 - 378
  18. Optoelectronic and structural characteristics of Er-doped amorphous AlN films; ZANATTA, A R;Zanatta, A. R.; RIBEIRO, C T M; JAHN, U; Journal of Applied Physics, 98 (2005) 93514
  19. Annealing effects on crystallized Al-doped a-Ge:H thin films.; FAJARDO, F; ZANATTA, A R;Zanatta, A. R.; CHAMBOULEYRON, I; Physica Status Solidi. A, Applied Research, 2 (2005) 3750 - 3753
  20. Low-temperature Al-induced crystallization of amorphous Ge; ZANATTA, A R;Zanatta, A. R.; CHAMBOULEYRON, I; Journal of Applied Physics, 97 (2005) 94914
  21. Annealing crystallization of a-Ge/Al/Si and a-Ge/Si thin films.; FAJARDO, F; ZANATTA, A R;Zanatta, A. R.; CHAMBOULEYRON, I; Physica Status Solidi. B, Basic Research, 242 (2005) 1906 - 1909
  22. B-BaB2O4 nanometric powder obtained from the ternary BaO-B2O3-TiO2 system using the polymeric precursor method; MAIA, L J Q; BERNARDI, M I B; ZANATTA, A R;Zanatta, A. R.; HERNANDES, A C; MASTELARO, V R; Materials Science and Engineering. B, Solid State Materials for Advanced Technology, 107 (2004) 33 - 38
  23. Laser-induced generation of micrometer-sized luminescent patterns on rare-earth-doped amorphous semiconductors; ZANATTA, A R;Zanatta, A. R.; RIBEIRO, C T M; Journal of Applied Physics, 96 (2004) 5977 - 5981
  24. Photoluminescence of a-GeN alloys doped with different rare-earth ions; RIBEIRO, C T M; ZANATTA, A R;Zanatta, A. R.; Journal of Non-Crystalline Solids, 338 (2004) 469 - 472
  25. Spectroscopic study of Nd-doped amorphous SiN films; RIBEIRO, C T M; LI, M S; ZANATTA, A R;Zanatta, A. R.; Journal of Applied Physics, 96 (2004) 1068 - 1073
  26. Synthesis and characterization of the B-BaB2O4 phase obtained by the polymeric precursor method; NEVES, P P; MAIA, L J Q; BERNARDI, M I B; ZANATTA, A R;Zanatta, A. R.; MASTELARO, V R; ZANETTI, S M; LEITE, E R; Journal of Sol-Gel Science and Technology, 29 (2004) 89 - 96
  27. Photon and electron excitation of rare-earth-doped a-SiN films; ZANATTA, A R;Zanatta, A. R.; RIBEIRO, C T M; JAHN, U; Journal of Non-Crystalline Solids, 338 (2004) 473 - 476
  28. Comprehensive spectroscopic study of nitrogenated carbon nanotubes; DROPPA, R; RIBEIRO, C T M; ZANATTA, A R;Zanatta, A. R.; SANTOS, M; ALVAREZ, F; Physical Review B - Condensed Matter and Materials Physics, 69 (2004) 1 - 9
  29. Formation of silicon nanocrystals in SiO2 by oxireduction reaction induced by impurity implantation and annealing; JACOBSOHN, L G; ZANATTA, A R;Zanatta, A. R.; NASTASI, M; Journal of Vacuum Science & Technology B, 22 (2004) 1669 - 1671
  30. Synthesis and characterization of beta barium borate thin films obtained from the BaO-B2O3-TiO2 ternary system; MAIA, L J Q; BERNARDI, M I B; FEITOSA, C A C; MASTELARO, V R; ZANATTA, A R;Zanatta, A. R.; HERNANDES, A C; Thin Solid Films, 457 (2004) 246 - 252
  31. Thermal lens and non-linear optical absorption study of a-SiH films.; MESSIAS, D N; ZANATTA, A R;Zanatta, A. R.; CATUNDA, T; Journal of Non-Crystalline Solids, 348 (2004) 230 - 234
  32. Amorphous hydrogenated carbon films deposited by PECVD: influence of the substrate temperature on film growth and microstructure; CAPOTE, G; PRIOLI, R; JARDIM, P M; ZANATTA, A R;Zanatta, A. R.; JACOBSOHN, L G; FREIRE, F L; Journal of Non-Crystalline Solids, 338 (2004) 503 - 508
  33. Unusual interactions binding iron tetrasulfonated phthalocyanine and puly(allylamine hydrochloride) in layer-by-layer films.; ZUCOLOTTO, V; FERREIRA, M; CORDEIRO, M R; CONSTANTINO, C J L; BALOGH, D T; ZANATTA, A R;Zanatta, A. R.; MOREIRA, W C; OLIVEIRA JUNIOR, O N; The Journal of Physical Chemistry B, 107 (2003) 3733 - 3737
  34. Magnetic properties of amorphous Si films doped with rare-earth elements; SERCHELI, M S; RETTORI, C; ZANATTA, A R;Zanatta, A. R.; Physical Review B - Condensed Matter and Materials Physics, 68 (2003) 1 - 6
  35. X-ray photoelectron spectroscopic study of rare-earth-doped a-SiN films.; ZANATTA, A R;Zanatta, A. R.; RIBEIRO, C T M; ALVAREZ, F; Journal of Applied Physics, 93 (2003) 1948 - 1953
  36. Synthesis and spectroscopic investigation of ruby microstructures; RIBEIRO, C T M; ZANATTA, A R;Zanatta, A. R.; Applied Physics Letters, 83 (2003) 2336 - 2338
  37. Photoluminescence quenching in Er-doped compounds; ZANATTA, A R;Zanatta, A. R.; Applied Physics Letters, 82 (2003) 1395 - 1397
  38. Neutral dangling bond depletion in amorphous SiN films induced by magnetic rare-earth elements; SERCHELI, M S; RETTORI, C; ZANATTA, A R;Zanatta, A. R.; Solid State Communications, 128 (2003) 47 - 50
  39. Plasma desposition of a-C films from CH4 atmospheres highly diluted in Ar; JACOBSOHN, L G; CAPOTE, G; CRUZ, N C; ZANATTA, A R;Zanatta, A. R.; FREIRE JÚNIOR, F L; Thin Solid Films, 419 (2002) 46 - 53
  40. Laser interference structuring of a-Ge films on GaAs; SANTOS, P V; ZANATTA, A R;Zanatta, A. R.; JAHN, U; TRAMPERT, A; DONDEO, F; CHAMBOULEYRON, I; Journal of Applied Physics, 91 (2002) 2916 - 2920
  41. X-ray photoelectron spectroscopy of amorphous AlN alloys prepared by reactive rf sputtering; RIBEIRO, C T M; ZANATTA, A R;Zanatta, A. R.; ALVAREZ, F; Journal of Non-Crystalline Solids, 299 (2002) 323 - 327
  42. Magnetic properties of gadolinium-doped amorphous silicon films; SERCHELI, M S; RETTORI, C; ZANATTA, A R;Zanatta, A. R.; Brazilian Journal of Physics, 32 (2002) 409 - 411
  43. Optical diffraction gratings produced by laser interference structuring of a-GeN alloys; MULATO, M; ZANATTA, A R;Zanatta, A. R.; TOET, D; CHAMBOULEYRON, I; Applied Physics Letters, 81 (2002) 2731 - 2733
  44. Pulsed laser crystallization and structuring of a-Ge on GaAs; SANTOS, P V; ZANATTA, A R;Zanatta, A. R.; DONDEO, F; TRAMPERT, A; JAHN, U; COMEDI, D; PUDENZI, M A A; CHAMBOULEYRON, I; Journal of Non-Crystalline Solids, 299 (2002) 137 - 142
  45. Structural properties of aluminum-nitrogen films prepared at low temperature; RIBEIRO, C T M; ALVAREZ, F; ZANATTA, A R;Zanatta, A. R.; Applied Physics Letters, 81 (2002) 1005 - 1007
  46. Comment on Ion-assisted pulsed laser deposition of AlN thin films; ZANATTA, A R;Zanatta, A. R.; RIBEIRO, C T M; ALVAREZ, F; Journal of Applied Physics, 92 (2002) 6349 - 6350
  47. Microscopic mechanisms behind the Al-induced crystallization of a-Ge:H films; CHAMBOULEYRON, I; FAJARDO, F; ZANATTA, A R;Zanatta, A. R.; Journal of Non-Crystalline Solids, 299 (2002) 143 - 147
  48. Red and green light emission from Sm-doped amorphous aluminum-nitride films; RIBEIRO, C T M; ALVAREZ, F; ZANATTA, A R;Zanatta, A. R.; Advanced Materials (Weinheim), 14 (2002) 1154 - 1157
  49. Structural properties of hydrogenated carbon-nitride films produced by ion-beam-assited evaporation of the molecular precursor C4N6H4; HAMMER, P; LACERDA, R G; VALENTE, G M S; DROPPA JUNIOR, R; SANTOS, M C; ALVAREZ, F; ZANATTA, A R;Zanatta, A. R.; Journal of Applied Physics, 89 (2001) 7852 - 7859
  50. Optoelectronic and structural properties of Er-doped sputter-deposited gallium-arsenic-nitrogen films; ZANATTA, A R;Zanatta, A. R.; RIBEIRO, C T M; FREIRE JÚNIOR, F L; Journal of Applied Physics, 90 (2001) 2321 - 2328
  51. Visible luminescence from a-SiN films doped with Er and Sm; ZANATTA, A R;Zanatta, A. R.; RIBEIRO, C T M; JAHN, U; Applied Physics Letters, 79 (2001) 488 - 490
  52. Aluminum-induced crystallization of hydrogenated a-Ge thin films; CHAMBOULEYRON, I; FAJARDO, F; ZANATTA, A R;Zanatta, A. R.; Applied Physics Letters, 79 (2001) 3233 - 3235
  53. Epitaxial pulsed laser crystallization of amorphous germanium on GaAs; SANTOS, P V; TRAMPERT, A; DONDEO, F; COMEDI, D; ZHU, H J; PLOOG, K H; ZANATTA, A R;Zanatta, A. R.; CHAMBOULEYRON, I; Journal of Applied Physics, 90 (2001) 2575 - 2581
  54. Effects of SiH2Cl2 on the deposition and properties of amorphous and microcrystalline silicon fabricated from very high frequency glow discharges; MULATO, M; WAGNER, S; ZANATTA, A R;Zanatta, A. R.; Journal of the Electrochemical Society, 147 (2000) 1829 - 1834
  55. Photoelectron spectroscopic study of amorphous GaAsN films; ZANATTA, A R;Zanatta, A. R.; HAMMER, P; ALVAREZ, F; Applied Physics Letters, 76 (2000) 2211 - 2213
  56. Infrared photoluminescence from Er-doped a-GaAsN alloys; ZANATTA, A R;Zanatta, A. R.; Journal of Non-Crystalline Solids, 266/9 (2000) 854 - 858
  57. Microcrystalline silicon with high electron field-effect mobility deposited at 230C; MULATO, M; CHEN, Y; WAGNER, S; ZANATTA, A R;Zanatta, A. R.; Journal of Non-Crystalline Solids, 266/9 (2000) 1260 - 1264
  58. Optical study of thermally annealed Er-doped hydrogenated a-Si films; ZANATTA, A R;Zanatta, A. R.; FREIRE, F L; Physical Review B - Condensed Matter and Materials Physics, 62 (2000) 2016 - 2020
  59. Optical excitation of Er3+ ions in a-SiN alloys; BELL, M J V; NUNES, L A O; ZANATTA, A R;Zanatta, A. R.; Journal of Applied Physics, 86 (1999) 338 - 341
  60. Optical and structural properties of laser annealed Er-doped a-Si thin films; BELL, M J V; NUNES, L A O; ZANATTA, A R;Zanatta, A. R.; Journal of Applied Physics, 86 (1999) 701 - 703
  61. Visible photoluminescence from Er3+ ions in a-SiN alloys; ZANATTA, A R;Zanatta, A. R.; BELL, M J V; NUNES, L A O; Physical Review B - Condensed Matter and Materials Physics, 59 (1999) 10091 - 10098
  62. 1540nm light emission from Er-doped amorphous GaAsN films; ZANATTA, A R;Zanatta, A. R.; Applied Physics Letters, 75 (1999) 3279 - 3281
  63. Nitrogen in germanium; CHAMBOULEYRON, I; ZANATTA, A R;Zanatta, A. R.; Journal of Applied Physics, 84 (1998) 01 - 30
  64. Erbium luminescence in a-Si:H; TESSLER, L R; ZANATTA, A R;Zanatta, A. R.; Journal of Non-Crystalline Solids, 230 (1998) 399 - 402
  65. Exponential absorption edge and disorder in column IV amorphous semiconductors; ZANATTA, A R;Zanatta, A. R.; MULATO, M; CHAMBOULEYRON, I; Journal of Applied Physics, 84 (1998) 5184 - 5190
  66. Green photoluminescence from Er-containing amorphous SiN thin films; ZANATTA, A R;Zanatta, A. R.; NUNES, L A O; Applied Physics Letters, 72 (1998) 3127 - 3129
  67. Espectroscopia óptica de vidros fluoroindatos dopados com íons 'Er POT.3+'e 'Yb POT. 3'.; RIBEIRO, C T M; ZANATTA, A R;Zanatta, A. R.; SARTORI, J; NUNES, L A O; MESSADDEQ, Y; Química Nova, 21 (1998) 521 - 525
  68. 1.54um photoluminescence of Er-containing N-doped a-Si:H; ZANATTA, A R;Zanatta, A. R.; NUNES, L A O; Journal of Non-Crystalline Solids, 230 (1998) 389 - 393
  69. Optical spectroscopy of Er3+ and Yb3+ co-doped fluoroindate glasses; RIBEIRO, C T M; ZANATTA, A R;Zanatta, A. R.; NUNES, L A O; MESSADDEQ, Y; AEGERTER, M A; Journal of Applied Physics, 83 (1998) 2256 - 2260
  70. Infrared spectroscopy of Er-containing amorphous silicon thin films; ZANATTA, A R;Zanatta, A. R.; NUNES, L A O; Applied Physics Letters, 71 (1997) 3679 - 3681
  71. Erbium luminescence from hydrogenated amorphous Silicon-Erbium prepared by cosputtering; ZANATTA, A R;Zanatta, A. R.; NUNES, L A O; TESSLER, L R; Applied Physics Letters, 70 (1997) 511 - 513
  72. Absorption edge, band tails, and disorder of amorphous semiconductors; ZANATTA, A R;Zanatta, A. R.; CHAMBOULEYRON, I; Physical Review B - Condensed Matter and Materials Physics, 53 (1996) 3833 - 3836
  73. Electronic structure of a-GeN alloys: a UV photoelectron spectroscopy study; COMEDI, D; ZANATTA, A R;Zanatta, A. R.; ALVAREZ, F; CHAMBOULEYRON, I; Journal of Non-Crystalline Solids, 198 (1996) 136 - 139
  74. Study of structural changes in a-GeN alloys by optical techniques; ZANATTA, A R;Zanatta, A. R.; CHAMBOULEYRON, I; SANTOS, P V; Journal of Applied Physics, 79 (1996) 433 - 438
  75. Bond distribution and structure of amorphous germanium nitrogen alloys; ZANATTA, A R;Zanatta, A. R.; CHAMBOULEYRON, I; Physica Status Solidi. B, Basic Research, 193 (1996) 399 - 410
  76. The perspectives of a-Ge:H as an electronic material; CHAMBOULEYRON, I; GRAEFF, C F O; ZANATTA, A R;Zanatta, A. R.; FAJARDO, F; MULATO, M; CAMPOMANES, R; COMEDI, D; MARQUES, F C; Physica Status Solidi. B, Basic Research, 192 (1995) 241 - 251
  77. Study of amorphous Ge-N alloys through XPS and XAES; ZANATTA, A R;Zanatta, A. R.; LANDERS, R; CASTRO, S; KLEIMAN, G; CHAMBOULEYRON, I; GRILLI, M L; Applied Physics Letters, 66 (1995) 1258 - 1260
  78. Photoelectron spectroscopy of core-levels using He II (40.8 eV) excitation; COMEDI, D; ZANATTA, A R;Zanatta, A. R.; ALVAREZ, F; CHAMBOULEYRON, I; Journal of Vacuum Science and Technology. Part A. Vacuum, Surfaces and Films, 13 (1995) 2278 - 2280
  79. Local electronegativity and chemical shift in Si and Ge based molecules and alloys; ZANATTA, A R;Zanatta, A. R.; CHAMBOULEYRON, I; Solid State Communications, 95 (1995) 207 - 210
  80. Photoconductivity of intrinsic and N-doped a-Ge:H thin films; MARCANO, G; ZANATTA, A R;Zanatta, A. R.; CHAMBOULEYRON, I; Journal of Applied Physics, 75 (1994) 4662 - 4667
  81. Nitrogen doping in amorphous semiconductors; ZANATTA, A R;Zanatta, A. R.; CHAMBOULEYRON, I; Brazilian Journal of Physics, 24 (1994) 434 - 437
  82. On the doping efficiency of nitrogen in hydrogenated amorphous germanium; CHAMBOULEYRON, I; ZANATTA, A R;Zanatta, A. R.; Applied Physics Letters, 62 (1993) 58 - 60
  83. Infrared absorption and composition of amorphous Ge-N alloys; ZANATTA, A R;Zanatta, A. R.; FREIRE, F L; CHAMBOULEYRON, J I; Journal of Physics. Condensed Matter, 5 (1993) 313 - 314
  84. Nitrogen in the a-Ge network: from high dilution to the alloy phase; ZANATTA, A R;Zanatta, A. R.; CHAMBOULEYRON, I; Physical Review B - Condensed Matter and Materials Physics, 48 (1993) 4560 - 4570
  85. EXAFS investigation of short-range order in a-GeSn alloys; PASCARELLI, S; BOSCHERINI, F; MOBILIO, S; ZANATTA, A R;Zanatta, A. R.; MARQUES, F C; CHAMBOULEYRON, I; Physical Review B - Condensed Matter and Materials Physics, 46 (1992) 6718 - 6723
  86. Transport properties of N-doped hydrogenated amorphous germanium films; ZANATTA, A R;Zanatta, A. R.; CHAMBOULEYRON, I; Physical Review B - Condensed Matter and Materials Physics, 46 (1992) 2119 - 2125

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