Produção Acadêmica
Chart.
Effect of thermal annealing treatments on the optical properties of rare-earth-doped AlN films ;
ZANATTA, A R;
Journal of Physics. D, Applied Physics, 42 (2009) 025109
Structural, optical and morphological characterization of amorphous GeMn films deposited by sputtering ;
FERRI, F A;
ZANATTA, A R;
Journal of Physics. D, Applied Physics, 42 (2009) 035005
Electrophoretic deposition of BaCaTiO3 nanpowders ;
Antonelli, E;
Silva, RS;
de Vicente, FS;
ZANATTA, A R;Zanatta, A. R.;
HERNANDES, A C;
Journal of Materials Processing Technology, 203 (2008) 526 -
531
Influence of film thickness on the crystallization of Ni-doped amorphous silicon samples ;
Ferri, F. A.;
ZANATTA, A R;Zanatta, A. R.;
Journal of Applied Physics, 104 (2008) 013534
Resonant excitation of Mn local vibrational modes in the higher order Raman spectra of nanocrystalline GaMnN films ;
SILVA, J. H. D.;
LEITE, D. M. G.;
ZANATTA, A R;Zanatta, A. R.;
Journal of Physics. Condensed Matter, 20 (2008) 252201
Aluminum-induced nanocrystalline Ge formation at low temperatures ;
MUNIZ, L.;
RIBEIRO, C T M;
ZANATTA, A R;Zanatta, A. R.;
CHAMBOULEYRON, I;
Journal of Physics. Condensed Matter, 19 (2007) 076206
Red-green-blue light emission and energy transfer processes in amorphous SiN films doped with Sm and Tb ;
ZANATTA, A R;Zanatta, A. R.;
KHAN, A.;
KORDESCH, M.;
Journal of Physics. Condensed Matter, 19 (2007) 436230-1 -
436230-8
Amorphous BeN as a new solid host for rare-earth-related luminescent materials ;
ZANATTA, A R;Zanatta, A. R.;
RICHARDSON, H.;
KORDESCH, M.;
physica status solidi (RRL), 1 (2007) 153 -
155
Crystallization, stress, and stress-relieve due to nickel in amorphous silicon thin films ;
ZANATTA, A R;Zanatta, A. R.;
FERRI, F A;
Journal of Applied Physics, 102 (2007) 043509-1 -
043509-5
Optical properties of Er and Er+Yb doped hydrogenated amorphous silicon films ;
OLIVEIRA, V I;
FREIRE JÚNIOR, F L;
ZANATTA, A R;Zanatta, A. R.;
Journal of Physics. Condensed Matter, 18 (2006) 7709 -
7716
Thermal activation, cathodo- and photoluminescence measurements of rare-earth-doped (Tm, Tb, Dy, Eu, Sm, Yb) amorphous/nanocrystalline AlN thin films prepared by reactive rf-sputtering ;
WEINGARTNER, R.;
ERLENBACH, O.;
WINNACKER, A.;
WELTE, A.;
BRAUER, I.;
MENDEL, H.;
STRUNK, H.;
RIBEIRO, C T M;
ZANATTA, A R;Zanatta, A. R.;
Optical Materials (Amsterdam), 28 (2006) 790 -
793
Spectroscopic investigation of Nd-doped amorphous SiN films ;
RIBEIRO, C T M;
ZANATTA, A R;Zanatta, A. R.;
Journal of Non-Crystalline Solids, 352 (2006) 1286 -
1289
Metal-induced nanocrystalline structures in Ni-containing amorphous silicon thin films ;
FERRI, F A;
ZANATTA, A R;Zanatta, A. R.;
CHAMBOULEYRON, I;
Journal of Applied Physics, 100 (2006) 094311-1 -
7
Thermoluminescence of aluminophosphate glasses in the metaphosphate composition ;
SANTOS, C N;
YUKIMUTI, K.;
ZANATTA, A R;Zanatta, A. R.;
HERNANDES, A C;
Nuclear Instruments & Methods in Physics Research. Section B. Beam Interactions with Materials and Atoms, 246 (2006) 374 -
378
The effect of the initial structure of silicon surface on the generation of multiple structural phases by ciclic microindentation ;
PIZANI, P S;
JASINEVICIUS, R. G.;
ZANATTA, A R;Zanatta, A. R.;
Applied Physics Letters, 89 (2006) 31917
Thermally synthesized ruby microstructures and luminescence centers ;
ZANATTA, A R;Zanatta, A. R.;
RIBEIRO, C T M;
JAHN, U;
ALDABERGENOVA, S.;
STRUNK, H.;
Journal of Applied Physics, 100 (2006) 113112-1 -
113112-7
Crystallization, texture and second-harmonic generation in TiO2-BaO-B2O3 glasses ;
FEITOSA, C A C;
MASTELARO, V R;
ZANATTA, A R;Zanatta, A. R.;
HERNANDES, A C;
ZANOTTO, E.;
Optical Materials (Amsterdam), 28 (2006) 935 -
943
Annealing crystallization of a-Ge/Al/Si and a-Ge/Si thin films. ;
FAJARDO, F;
ZANATTA, A R;Zanatta, A. R.;
CHAMBOULEYRON, I;
Physica Status Solidi. B, Basic Research, 242 (2005) 1906 -
1909
Annealing effects on crystallized Al-doped a-Ge:H thin films. ;
FAJARDO, F;
ZANATTA, A R;Zanatta, A. R.;
CHAMBOULEYRON, I;
Physica Status Solidi. A, Applied Research, 2 (2005) 3750 -
3753
Low-temperature Al-induced crystallization of amorphous Ge ;
ZANATTA, A R;Zanatta, A. R.;
CHAMBOULEYRON, I;
Journal of Applied Physics, 97 (2005) 94914
Optoelectronic and structural characteristics of Er-doped amorphous AlN films ;
ZANATTA, A R;Zanatta, A. R.;
RIBEIRO, C T M;
JAHN, U;
Journal of Applied Physics, 98 (2005) 93514
Amorphous hydrogenated carbon films deposited by PECVD: influence of the substrate temperature on film growth and microstructure ;
CAPOTE, G;
PRIOLI, R;
JARDIM, P M;
ZANATTA, A R;Zanatta, A. R.;
JACOBSOHN, L G;
FREIRE, F L;
Journal of Non-Crystalline Solids, 338 (2004) 503 -
508
B-BaB2O4 nanometric powder obtained from the ternary BaO-B2O3-TiO2 system using the polymeric precursor method ;
MAIA, L J Q;
BERNARDI, M I B;
ZANATTA, A R;Zanatta, A. R.;
HERNANDES, A C;
MASTELARO, V R;
Materials Science and Engineering. B, Solid State Materials for Advanced Technology, 107 (2004) 33 -
38
Laser-induced generation of micrometer-sized luminescent patterns on rare-earth-doped amorphous semiconductors ;
ZANATTA, A R;Zanatta, A. R.;
RIBEIRO, C T M;
Journal of Applied Physics, 96 (2004) 5977 -
5981
Photoluminescence of a-GeN alloys doped with different rare-earth ions ;
RIBEIRO, C T M;
ZANATTA, A R;Zanatta, A. R.;
Journal of Non-Crystalline Solids, 338 (2004) 469 -
472
Spectroscopic study of Nd-doped amorphous SiN films ;
RIBEIRO, C T M;
LI, M S;
ZANATTA, A R;Zanatta, A. R.;
Journal of Applied Physics, 96 (2004) 1068 -
1073
Synthesis and characterization of the B-BaB2O4 phase obtained by the polymeric precursor method ;
NEVES, P P;
MAIA, L J Q;
BERNARDI, M I B;
ZANATTA, A R;Zanatta, A. R.;
MASTELARO, V R;
ZANETTI, S M;
LEITE, E R;
Journal of Sol-Gel Science and Technology, 29 (2004) 89 -
96
Photon and electron excitation of rare-earth-doped a-SiN films ;
ZANATTA, A R;Zanatta, A. R.;
RIBEIRO, C T M;
JAHN, U;
Journal of Non-Crystalline Solids, 338 (2004) 473 -
476
Comprehensive spectroscopic study of nitrogenated carbon nanotubes ;
DROPPA, R;
RIBEIRO, C T M;
ZANATTA, A R;Zanatta, A. R.;
SANTOS, M;
ALVAREZ, F;
Physical Review B - Condensed Matter and Materials Physics, 69 (2004) 1 -
9
Formation of silicon nanocrystals in SiO2 by oxireduction reaction induced by impurity implantation and annealing ;
JACOBSOHN, L G;
ZANATTA, A R;Zanatta, A. R.;
NASTASI, M;
Journal of Vacuum Science & Technology B, 22 (2004) 1669 -
1671
Synthesis and characterization of beta barium borate thin films obtained from the BaO-B2O3-TiO2 ternary system ;
MAIA, L J Q;
BERNARDI, M I B;
FEITOSA, C A C;
MASTELARO, V R;
ZANATTA, A R;Zanatta, A. R.;
HERNANDES, A C;
Thin Solid Films, 457 (2004) 246 -
252
Thermal lens and non-linear optical absorption study of a-SiH films. ;
MESSIAS, D N;
ZANATTA, A R;Zanatta, A. R.;
CATUNDA, T;
Journal of Non-Crystalline Solids, 348 (2004) 230 -
234
Neutral dangling bond depletion in amorphous SiN films induced by magnetic rare-earth elements ;
SERCHELI, M S;
RETTORI, C;
ZANATTA, A R;Zanatta, A. R.;
Solid State Communications, 128 (2003) 47 -
50
Unusual interactions binding iron tetrasulfonated phthalocyanine and puly(allylamine hydrochloride) in layer-by-layer films. ;
ZUCOLOTTO, V;
FERREIRA, M;
CORDEIRO, M R;
CONSTANTINO, C J L;
BALOGH, D T;
ZANATTA, A R;Zanatta, A. R.;
MOREIRA, W C;
OLIVEIRA JUNIOR, O N;
The Journal of Physical Chemistry B, 107 (2003) 3733 -
3737
Magnetic properties of amorphous Si films doped with rare-earth elements ;
SERCHELI, M S;
RETTORI, C;
ZANATTA, A R;Zanatta, A. R.;
Physical Review B - Condensed Matter and Materials Physics, 68 (2003) 1 -
6
X-ray photoelectron spectroscopic study of rare-earth-doped a-SiN films. ;
ZANATTA, A R;Zanatta, A. R.;
RIBEIRO, C T M;
ALVAREZ, F;
Journal of Applied Physics, 93 (2003) 1948 -
1953
Synthesis and spectroscopic investigation of ruby microstructures ;
RIBEIRO, C T M;
ZANATTA, A R;Zanatta, A. R.;
Applied Physics Letters, 83 (2003) 2336 -
2338
Photoluminescence quenching in Er-doped compounds ;
ZANATTA, A R;Zanatta, A. R.;
Applied Physics Letters, 82 (2003) 1395 -
1397
Red and green light emission from Sm-doped amorphous aluminum-nitride films ;
RIBEIRO, C T M;
ALVAREZ, F;
ZANATTA, A R;Zanatta, A. R.;
Advanced Materials (Weinheim), 14 (2002) 1154 -
1157
Plasma desposition of a-C films from CH4 atmospheres highly diluted in Ar ;
JACOBSOHN, L G;
CAPOTE, G;
CRUZ, N C;
ZANATTA, A R;Zanatta, A. R.;
FREIRE JÚNIOR, F L;
Thin Solid Films, 419 (2002) 46 -
53
Laser interference structuring of a-Ge films on GaAs ;
SANTOS, P V;
ZANATTA, A R;Zanatta, A. R.;
JAHN, U;
TRAMPERT, A;
DONDEO, F;
CHAMBOULEYRON, I;
Journal of Applied Physics, 91 (2002) 2916 -
2920
X-ray photoelectron spectroscopy of amorphous AlN alloys prepared by reactive rf sputtering ;
RIBEIRO, C T M;
ZANATTA, A R;Zanatta, A. R.;
ALVAREZ, F;
Journal of Non-Crystalline Solids, 299 (2002) 323 -
327
Magnetic properties of gadolinium-doped amorphous silicon films ;
SERCHELI, M S;
RETTORI, C;
ZANATTA, A R;Zanatta, A. R.;
Brazilian Journal of Physics, 32 (2002) 409 -
411
Optical diffraction gratings produced by laser interference structuring of a-GeN alloys ;
MULATO, M;
ZANATTA, A R;Zanatta, A. R.;
TOET, D;
CHAMBOULEYRON, I;
Applied Physics Letters, 81 (2002) 2731 -
2733
Pulsed laser crystallization and structuring of a-Ge on GaAs ;
SANTOS, P V;
ZANATTA, A R;Zanatta, A. R.;
DONDEO, F;
TRAMPERT, A;
JAHN, U;
COMEDI, D;
PUDENZI, M A A;
CHAMBOULEYRON, I;
Journal of Non-Crystalline Solids, 299 (2002) 137 -
142
Structural properties of aluminum-nitrogen films prepared at low temperature ;
RIBEIRO, C T M;
ALVAREZ, F;
ZANATTA, A R;Zanatta, A. R.;
Applied Physics Letters, 81 (2002) 1005 -
1007
Comment on Ion-assisted pulsed laser deposition of AlN thin films ;
ZANATTA, A R;Zanatta, A. R.;
RIBEIRO, C T M;
ALVAREZ, F;
Journal of Applied Physics, 92 (2002) 6349 -
6350
Microscopic mechanisms behind the Al-induced crystallization of a-Ge:H films ;
CHAMBOULEYRON, I;
FAJARDO, F;
ZANATTA, A R;Zanatta, A. R.;
Journal of Non-Crystalline Solids, 299 (2002) 143 -
147
Epitaxial pulsed laser crystallization of amorphous germanium on GaAs ;
SANTOS, P V;
TRAMPERT, A;
DONDEO, F;
COMEDI, D;
ZHU, H J;
PLOOG, K H;
ZANATTA, A R;Zanatta, A. R.;
CHAMBOULEYRON, I;
Journal of Applied Physics, 90 (2001) 2575 -
2581
Structural properties of hydrogenated carbon-nitride films produced by ion-beam-assited evaporation of the molecular precursor C4N6H4 ;
HAMMER, P;
LACERDA, R G;
VALENTE, G M S;
DROPPA JUNIOR, R;
SANTOS, M C;
ALVAREZ, F;
ZANATTA, A R;Zanatta, A. R.;
Journal of Applied Physics, 89 (2001) 7852 -
7859
Optoelectronic and structural properties of Er-doped sputter-deposited gallium-arsenic-nitrogen films ;
ZANATTA, A R;Zanatta, A. R.;
RIBEIRO, C T M;
FREIRE JÚNIOR, F L;
Journal of Applied Physics, 90 (2001) 2321 -
2328
Visible luminescence from a-SiN films doped with Er and Sm ;
ZANATTA, A R;Zanatta, A. R.;
RIBEIRO, C T M;
JAHN, U;
Applied Physics Letters, 79 (2001) 488 -
490
Aluminum-induced crystallization of hydrogenated a-Ge thin films ;
CHAMBOULEYRON, I;
FAJARDO, F;
ZANATTA, A R;Zanatta, A. R.;
Applied Physics Letters, 79 (2001) 3233 -
3235
Effects of SiH2Cl2 on the deposition and properties of amorphous and microcrystalline silicon fabricated from very high frequency glow discharges ;
MULATO, M;
WAGNER, S;
ZANATTA, A R;Zanatta, A. R.;
Journal of the Electrochemical Society, 147 (2000) 1829 -
1834
Photoelectron spectroscopic study of amorphous GaAsN films ;
ZANATTA, A R;Zanatta, A. R.;
HAMMER, P;
ALVAREZ, F;
Applied Physics Letters, 76 (2000) 2211 -
2213
Infrared photoluminescence from Er-doped a-GaAsN alloys ;
ZANATTA, A R;Zanatta, A. R.;
Journal of Non-Crystalline Solids, 266/9 (2000) 854 -
858
Microcrystalline silicon with high electron field-effect mobility deposited at 230C ;
MULATO, M;
CHEN, Y;
WAGNER, S;
ZANATTA, A R;Zanatta, A. R.;
Journal of Non-Crystalline Solids, 266/9 (2000) 1260 -
1264
Optical study of thermally annealed Er-doped hydrogenated a-Si films ;
ZANATTA, A R;Zanatta, A. R.;
FREIRE, F L;
Physical Review B - Condensed Matter and Materials Physics, 62 (2000) 2016 -
2020
1540nm light emission from Er-doped amorphous GaAsN films ;
ZANATTA, A R;Zanatta, A. R.;
Applied Physics Letters, 75 (1999) 3279 -
3281
Optical excitation of Er3+ ions in a-SiN alloys ;
BELL, M J V;
NUNES, L A O;
ZANATTA, A R;Zanatta, A. R.;
Journal of Applied Physics, 86 (1999) 338 -
341
Optical and structural properties of laser annealed Er-doped a-Si thin films ;
BELL, M J V;
NUNES, L A O;
ZANATTA, A R;Zanatta, A. R.;
Journal of Applied Physics, 86 (1999) 701 -
703
Visible photoluminescence from Er3+ ions in a-SiN alloys ;
ZANATTA, A R;Zanatta, A. R.;
BELL, M J V;
NUNES, L A O;
Physical Review B - Condensed Matter and Materials Physics, 59 (1999) 10091 -
10098
Optical spectroscopy of Er3+ and Yb3+ co-doped fluoroindate glasses ;
RIBEIRO, C T M;
ZANATTA, A R;Zanatta, A. R.;
NUNES, L A O;
MESSADDEQ, Y;
AEGERTER, M A;
Journal of Applied Physics, 83 (1998) 2256 -
2260
Nitrogen in germanium ;
CHAMBOULEYRON, I;
ZANATTA, A R;Zanatta, A. R.;
Journal of Applied Physics, 84 (1998) 01 -
30
Erbium luminescence in a-Si:H ;
TESSLER, L R;
ZANATTA, A R;Zanatta, A. R.;
Journal of Non-Crystalline Solids, 230 (1998) 399 -
402
Exponential absorption edge and disorder in column IV amorphous semiconductors ;
ZANATTA, A R;Zanatta, A. R.;
MULATO, M;
CHAMBOULEYRON, I;
Journal of Applied Physics, 84 (1998) 5184 -
5190
Green photoluminescence from Er-containing amorphous SiN thin films ;
ZANATTA, A R;Zanatta, A. R.;
NUNES, L A O;
Applied Physics Letters, 72 (1998) 3127 -
3129
Espectroscopia óptica de vidros fluoroindatos dopados com íons 'Er POT.3+'e 'Yb POT. 3'. ;
RIBEIRO, C T M;
ZANATTA, A R;Zanatta, A. R.;
SARTORI, J;
NUNES, L A O;
MESSADDEQ, Y;
Química Nova, 21 (1998) 521 -
525
1.54um photoluminescence of Er-containing N-doped a-Si:H ;
ZANATTA, A R;Zanatta, A. R.;
NUNES, L A O;
Journal of Non-Crystalline Solids, 230 (1998) 389 -
393
Infrared spectroscopy of Er-containing amorphous silicon thin films ;
ZANATTA, A R;Zanatta, A. R.;
NUNES, L A O;
Applied Physics Letters, 71 (1997) 3679 -
3681
Erbium luminescence from hydrogenated amorphous Silicon-Erbium prepared by cosputtering ;
ZANATTA, A R;Zanatta, A. R.;
NUNES, L A O;
TESSLER, L R;
Applied Physics Letters, 70 (1997) 511 -
513
Bond distribution and structure of amorphous germanium nitrogen alloys ;
ZANATTA, A R;Zanatta, A. R.;
CHAMBOULEYRON, I;
Physica Status Solidi. B, Basic Research, 193 (1996) 399 -
410
Absorption edge, band tails, and disorder of amorphous semiconductors ;
ZANATTA, A R;Zanatta, A. R.;
CHAMBOULEYRON, I;
Physical Review B - Condensed Matter and Materials Physics, 53 (1996) 3833 -
3836
Electronic structure of a-GeN alloys: a UV photoelectron spectroscopy study ;
COMEDI, D;
ZANATTA, A R;Zanatta, A. R.;
ALVAREZ, F;
CHAMBOULEYRON, I;
Journal of Non-Crystalline Solids, 198 (1996) 136 -
139
Study of structural changes in a-GeN alloys by optical techniques ;
ZANATTA, A R;Zanatta, A. R.;
CHAMBOULEYRON, I;
SANTOS, P V;
Journal of Applied Physics, 79 (1996) 433 -
438
The perspectives of a-Ge:H as an electronic material ;
CHAMBOULEYRON, I;
GRAEFF, C F O;
ZANATTA, A R;Zanatta, A. R.;
FAJARDO, F;
MULATO, M;
CAMPOMANES, R;
COMEDI, D;
MARQUES, F C;
Physica Status Solidi. B, Basic Research, 192 (1995) 241 -
251
Study of amorphous Ge-N alloys through XPS and XAES ;
ZANATTA, A R;Zanatta, A. R.;
LANDERS, R;
CASTRO, S;
KLEIMAN, G;
CHAMBOULEYRON, I;
GRILLI, M L;
Applied Physics Letters, 66 (1995) 1258 -
1260
Photoelectron spectroscopy of core-levels using He II (40.8 eV) excitation ;
COMEDI, D;
ZANATTA, A R;Zanatta, A. R.;
ALVAREZ, F;
CHAMBOULEYRON, I;
Journal of Vacuum Science and Technology. Part A. Vacuum, Surfaces and Films, 13 (1995) 2278 -
2280
Local electronegativity and chemical shift in Si and Ge based molecules and alloys ;
ZANATTA, A R;Zanatta, A. R.;
CHAMBOULEYRON, I;
Solid State Communications, 95 (1995) 207 -
210
Nitrogen doping in amorphous semiconductors ;
ZANATTA, A R;Zanatta, A. R.;
CHAMBOULEYRON, I;
Brazilian Journal of Physics, 24 (1994) 434 -
437
Photoconductivity of intrinsic and N-doped a-Ge:H thin films ;
MARCANO, G;
ZANATTA, A R;Zanatta, A. R.;
CHAMBOULEYRON, I;
Journal of Applied Physics, 75 (1994) 4662 -
4667
On the doping efficiency of nitrogen in hydrogenated amorphous germanium ;
CHAMBOULEYRON, I;
ZANATTA, A R;Zanatta, A. R.;
Applied Physics Letters, 62 (1993) 58 -
60
Infrared absorption and composition of amorphous Ge-N alloys ;
ZANATTA, A R;Zanatta, A. R.;
FREIRE, F L;
CHAMBOULEYRON, J I;
Journal of Physics. Condensed Matter, 5 (1993) 313 -
314
Nitrogen in the a-Ge network: from high dilution to the alloy phase ;
ZANATTA, A R;Zanatta, A. R.;
CHAMBOULEYRON, I;
Physical Review B - Condensed Matter and Materials Physics, 48 (1993) 4560 -
4570
EXAFS investigation of short-range order in a-GeSn alloys ;
PASCARELLI, S;
BOSCHERINI, F;
MOBILIO, S;
ZANATTA, A R;Zanatta, A. R.;
MARQUES, F C;
CHAMBOULEYRON, I;
Physical Review B - Condensed Matter and Materials Physics, 46 (1992) 6718 -
6723
Transport properties of N-doped hydrogenated amorphous germanium films ;
ZANATTA, A R;Zanatta, A. R.;
CHAMBOULEYRON, I;
Physical Review B - Condensed Matter and Materials Physics, 46 (1992) 2119 -
2125