Produção Acadêmica

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Chart.
  1. Síntese e Caracterização de Filmes de Silício e Germânio Amorfo Dopados com Manganês; FERRI, F. A.; ZANATTA, A. R.; F. L. Freire Jr.; W. A. Iwamoto; C. Rettori; P. G. Pagliuso; In: XXXI Encontro Nacional de Física da Matéria Condensada, (2008) , Águas de Lindóia
  2. Photoelectron spectroscopic investigation of Mn-containing amorphous silicon and germanium films; FERRI, F. A.; ZANATTA, A. R.; Acuña, J. J. S.; Alvarez, F.; In: VII Encontro da Sociedade Brasileira de Pesquisa em Materiais, (2008) , Guarujá
  3. Cristalização e Stress Devidos à Presença de Níquel em Filmes de Silício Amorfo; FERRI, F. A.; ZANATTA, A. R.; In: XXXI Encontro Nacional de Física da Matéria Condensada, (2008) , Águas de Lindóia
  4. Determinação numérica da espessura e das constantes ópticas de filmes de silício amorfo dopados com níquel através de espectroscopia de transmissão; FERRI, F. A.; ZANATTA, A. R.; In: XXX Encontro Nacional de Física da Matéria Condensada, (2007) , São Lourenço
  5. Crystallization of amorphous silicon thin films: Influence of the substrate and the Ni concentration; FERRI, F. A.; ZANATTA, A. R.; CHAMBOULEYRON, I.; In: 11th International Conference on the Formation of Semiconductor Interfaces, (2007) , Manaus
  6. Cristalização Induzida por Níquel em Filmes de Silício Amorfo; FERRI, F A; ZANATTA, A R;Zanatta, A. R.; In: XXIX Encontro Nacional de Física da Matéria Condensada, (2006) , São Lourenço
  7. The influence of hydrogenation and of the nature of the substrate on the low-temperature Al-induced crystallization of amorphous germanium films; MUNIZ, L.; RIBEIRO, C T M; ZANATTA, A R;Zanatta, A. R.; CHAMBOULEYRON, I; In: 21st International Conference on Amorphous and Nanocrystalline Semiconductors, (2005) , Lisboa
  8. Propriedades ópticas e estruturais de filmes de a-Si:H dopados com Er, Yb e Cr; OLIVEIRA, V I; ZANATTA, A R;Zanatta, A. R.; In: XXVIII Encontro Nacional de Física da Matéria Condensada, (2005) , Santos
  9. Optical properties of rare-earth-doped a-AlN thin films; ZANATTA, A R;Zanatta, A. R.; RIBEIRO, C T M; WEINGARTNER, R.; STRUNK, H.; In: 21st International Conference on Amorphous and Nanocrystalline Semiconductors, (2005) , Lisboa
  10. Metal-induced crystallization of Ni-doped amorphous Si films; FERRI, F A; CHAMBOULEYRON, I; ZANATTA, A R;Zanatta, A. R.; In: 21st International Conference on Amorphous and Nanocrystalline Semiconductors, (2005) , Lisboa
  11. Cristalização induzida por alumínio em filmes finos de germânio amorfo hidrogenado: o papel do hidrogênio na cristalização; CHAMBOULEYRON, I; ZANATTA, A R;Zanatta, A. R.; MUNIZ, L.; RIBEIRO, C T M; In: XXVIII Encontro Nacional de Física da Matéria Condensada, (2005) , Santos
  12. Thermally synthesized ruby microstructure and luminescence centers; RIBEIRO, C T M; ZANATTA, A R;Zanatta, A. R.; JAHN, U; ALDABERGENOVA, S.; STRUNK, H.; In: 21st International Conference on Amorphous and Nanocrystalline Semiconductors, (2005) , Lisboa
  13. Filmes de Silício Amorfo dopados com Níquel; FERRI, F. A.; ZANATTA, A. R.; In: XXVIII Encontro Nacional de Física da Matéria Condensada, (2005) 537 - 537, Santos
  14. Spectroscopic investigation of Nd-doped amorphous SiN films; RIBEIRO, C T M; ZANATTA, A R;Zanatta, A. R.; In: 21st International Conference on Amorphous and Nanocrystalline Semiconductors, 352 (2005) 1286 - 1289, Lisboa
  15. Fimes de silício amorfo dopados com níquel; ZANATTA, A R;Zanatta, A. R.; FERRI, F A; In: XXVIII Encontro Nacional de Física da Matéria Condensada, (2005) , Santos
  16. Photoluminescence of a-GeN alloys doped with different rare-earth ions; RIBEIRO, C T M; ZANATTA, A R;Zanatta, A. R.; In: 20th International Conference on Amorphous and Microcrystalline Semiconductors, (2003) , Campos do Jordão
  17. Amorphous hydrogenated carbon films deposited by PECVD: influence of the substrate temperature on film growth and microstructure; CAPOTE, G; PRIOLI, R; JARDIM, P M; ZANATTA, A R;Zanatta, A. R.; JACOBSOHN, L G; FREIRE, F L; In: 20th International Conference on Amorphous and Microcrystalline Semiconductors, (2003) , Campos do Jordão
  18. Photon and electron excitation of rare-earth-doped amorphous SiN films; ZANATTA, A R;Zanatta, A. R.; RIBEIRO, C T M; JAHN, U; In: 20th International Conference on Amorphous and Microcrystalline Semiconductors, (2003) , Campos do Jordão
  19. The role of hydrogenation and of thermal annealing in the Al-induced crystallization of sputtered amorphous germanium films; ZANATTA, A R;Zanatta, A. R.; CHAMBOULEYRON, I; In: 20th International Conference on Amorphous and Microcrystalline Semiconductors, (2003) , Campos do Jordão
  20. X-ray photoelectron spectroscopy of amorphous AlN alloys prepared by reactive rf sputtering; RIBEIRO, C T M; ZANATTA, A R;Zanatta, A. R.; ALVAREZ, F; In: 19th International Conference on Amorphous and Microcrystalline Semiconductors, (2001) , Nice
  21. Pulsed laser crystallization and structuring of a-Ge on GaAs; SANTOS, P V; ZANATTA, A R;Zanatta, A. R.; DONDEO, F; TRAMPERT, A; JAHN, U; COMEDI, D; PUDENZI, M; CHAMBOULEYRON, I; In: 19th International Conference on Amorphous and Microcrystalline Semiconductors, (2001) , Nice
  22. Microscopic mechanisms behind the Al-induced crystallization of a-Ge:H films; CHAMBOULEYRON, I; FAJARDO, F; ZANATTA, A R;Zanatta, A. R.; In: 19th International Conference on Amorphous and Microcrystalline Semiconductors, (2001) , Nice
  23. Infrared photoluminescence from Er-doped a-GaAsN alloys; ZANATTA, A R;Zanatta, A. R.; In: 18th International Conference on Amorphous and Microcrystalline Semiconductors, (1999) , Snowbird
  24. Microcrystalline silicon with high electron field-effect mobility deposited at 230 C; MULATO, M; CHEN, Y; WAGNER, S; ZANATTA, A R;Zanatta, A. R.; In: 18th International Conference on Amorphous and Microcrystalline Semiconductors, (1999) , Snowbird
  25. 1.54 micron photoluminescence of Er-containing N-doped a-Si:H; ZANATTA, A R;Zanatta, A. R.; NUNES, L A O; In: 17th International Conference on Amorphous and Microcrystalline Semiconductors, (1997) , Budapeste
  26. Laser annealed Er-Doped a-Si:H thin films; BELL, M J V; NUNES, L A O; ZANATTA, A R;Zanatta, A. R.; In: Symposium on Lasers and their Applications, (1997) 260 - 263, Campinas - SP
  27. Erbium luminescence in a-Si:H; TESSLER, L R; ZANATTA, A R;Zanatta, A. R.; In: 17th International Conference on Amorphous and Microcrystalline Semiconductors, (1997) , Budapeste
  28. The perspectives of a-Ge:H films as an electronic material; CHAMBOULEYRON, I; GRAEFF, C F O; ZANATTA, A R;Zanatta, A. R.; FAJARDO, F; MULATO, M; CAMPOMANES, R; COMEDI, D; MARQUES, F C; In: 1st Brazilian/German Workshop on Applied Surface Science, (1995) , Rio de Janeiro
  29. XPS study of Non-Stoichiometric a-GeN Alloys; ZANATTA, A R;Zanatta, A. R.; In: 8th Latin American Congress on Surface Science and its Applications, 378 (1994) 305 - 309, Cancun
  30. Valence-band structure of a-GeN alloys; ZANATTA, A R;Zanatta, A. R.; In: 8th Latin American Congress on Surface Science and its Applications, 378 (1994) 310 - 314, Cancun
  31. Nitrogen doping in a-Ge:H films; ZANATTA, A R;Zanatta, A. R.; In: 11th Photovoltaic Solar Energy Conference, (1993) 629 - 632, Montreaux
  32. Nitrogen doping in amorphous semiconductors; ZANATTA, A R;Zanatta, A. R.; In: 6th Brazilian School on Semiconductor Physics, 24 (1993) 434 - 437, São Carlos - SP
  33. Infrared absorption and composition of amorphous GeN Alloys; ZANATTA, A R;Zanatta, A. R.; In: 7th Latin American Symposium on Surface Physics, 5 (1992) 313 - 314, Bariloche
  34. Deposition and characterization of a-Ge:H thin films; ZANATTA, A R;Zanatta, A. R.; In: 5th Brazilian School Semiconductor Physics, (1991) 469 - 473, Aguas de Lindóia - SP

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